By C.K Maiti, G.A Armstrong
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Additional info for Applications of silicon-germanium heterostructure devices
5. VERTICAL HETEROSTRUCTURE FETS Vertical MOS structures are being explored for increasing the integration density and for incorporation of quantum eﬀects into MOS devices. Vertical MOS heterostructures are expected to solve the scaling issues of lithography, doping conﬁnement and DIBL. Vertical devices will have Vertical heterostructure FETs 19 small contact areas and will facilitate interconnects and minimize the via contacts leading to a minimization of the area per function. 3 V at VDD of 1 V and an intrinsic carrier transit time of less than 1 ps.
3) where ai is the lattice parameter of the ith component. , zero net strain). 3), for about 12% Ge in Si and 1% C in silicon, the mismatch is equal and opposite and a strain symmetrized structure with average zero strain may be obtained. Addition of substitutional carbon to the Si1−x Gex material system can provide an additional design parameter in band structure engineering on Si substrates. 66 eV (Ge) exist, the Si1−x−y Gex Cy system may result in an increase in the bandgap to values greater than those of SiGe and Si, in addition to other interesting properties such as the highest known thermal conductivity (diamond), high hole mobility (Ge) and matured processing technology (Si).
1997 IEEE/Cornell Conf. on Advanced Concepts in High Speed Semiconductor Devices and Circuits pp 14–23  Larson L E 1998 High-speed Si/SiGe technology for next generation wireless system applications J. Vac. Sci. Technol. B 16 1541–8  Kasper E, Herzog H J and Kibbel H 1975 A one-dimensional SiGe superlattice grown by UHV epitaxy Appl. Phys. 8 199–205  Smith C and Welbourn A D 1987 Prospects for a heterostructure bipolar transistor using a silicon–germanium alloy IEEE BCTM Proc. pp 57–64  McGregor J M, Roulston D J, Hamel J S, Vaidyanathan M, Jain S C and Bulk P 1993 A simple expression for ECL propagation delay including non-quasi-static eﬀects Solid-State Electron.
Applications of silicon-germanium heterostructure devices by C.K Maiti, G.A Armstrong