Geckeler K.E., Nishide H. (eds.)'s Advanced Nanomaterials PDF

By Geckeler K.E., Nishide H. (eds.)

ISBN-10: 3527317945

ISBN-13: 9783527317943

During this first accomplished compilation of assessment chapters in this scorching subject, greater than 30 specialists from all over the world offer in-depth chapters on their particular components of craftsmanship, overlaying such crucial themes as:Block Copolymer platforms, Nanofibers and NanotubesHelical Polymer-Based Supramolecular FilmsSynthesis of Inorganic NanotubesGold Nanoparticles and Carbon NanotubesRecent Advances in steel Nanoparticle-Attached ElectrodesOxidation Catalysis via Nanoscale Gold, Silver, and CopperConcepts in Self-AssemblyNanocompositesAmphiphilic Poly(Oxyalkylene)-AminesMesoporous AluminaNanoceramics for clinical ApplicationsEcological Toxicology of Engineered Carbon NanoparticlesMolecular ImprintingNear-Field Raman Imaging of Nanostructures and DevicesFullerene-Rich NanostructuresInteractions of Carbon Nanotubes with BiomoleculesNanoparticle-Cored Dendrimers and Hyperbranched PolymersNanostructured Organogels through Molecular Self-AssemblyStructural DNA NanotechnologyWith its assurance of all such very important parts as self-assembly, polymeric fabrics, bionanomaterials, nanotubes, photonic and environmental elements, this is often a necessary reference for fabrics scientists, engineers, chemists, physicists and biologists wishing to achieve an in-depth wisdom of all of the disciplines concerned.

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This can happen because of chemical deprotection, bond rearrangement, or chain-scission mechanisms. • Negative-tone resist chemistry refers to a photoresist that becomes less soluble through the formation of crosslinked networks after exposure to UV light. In this chapter, we will highlight the many approaches that have been used for one or both of these types of chemistries, in order to fabricate functional nanoscale-sized structures using BCPs. 2 Block Copolymers as Nanolithographic Templates The lithography community has been extremely successful in its ability to pack progressively more circuit elements into a chip, as governed by the benchmark pace first predicted by Gordon Moore in 1989, which states that the transistor density of semiconductor chips will double roughly every 18 months [74].

Other resists which have incorporated PDMS for etch resistance in both block and graft copolymer architectures have also been reviewed [153]. 18) via group transfer polymerization for applications in 193 nm photolithography [154]. The BCP architecture allowed Gabor’s group to incorporate a larger amount of the hydrophobic siloxane component for a high-oxygen RIE resistance, while maintaining solubility in an aqueous base developer. 19). Gabor et al. hypothesized that the exposed polymeric regions formed micelles in the aqueous base developer, with the silicon-containing block forming the core and the soluble methacrylic acid group forming the corona.

In order to transfer these patterns onto the silicon substrate it is first necessary to write the pattern, and for this the technique of photolithography is used, in which radiation-sensitive polymers play an integral role. Standard photolithography consists of essentially two steps: (i) writing of the pattern into a radiation-sensitive polymer thin film (resist); and (ii) transferring the pattern by etching into the underlying substrate [72]. 7a. As photolithography and its associated technologies will become a recurring theme in this chapter, a brief primer on the subject will be useful at this point.

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Advanced Nanomaterials by Geckeler K.E., Nishide H. (eds.)

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